ICPT 2018
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International Executive Committee
Korea Jin-Goo Park, Hanyang University
Haedo Jeong, Pusan National University China Xinchun Lu, Tsinghua University
Xinping Qu, Fudan University Europe Gerfried Zwicker, Fraunhofer ISIT
Viorel Balan, CEA-LETI, France Taiwan Arthur Chen, National Taiwan University
Chris Chern, TSMC United States Ashwani K. Rawat, Intel
Rob Rhoades, Revasum Japan Syuhei Kurokawa, Kyushu University
Yukiteru Matsui, Toshiba Memory Corporation -
International Program Committee
Korea Kwangsu Kim, Daelim Univ.
Jonghan Shin, SK Hynix Semiconductor
Yungjun Kim, Samsung Electronics
China Shumin Wang, Anji Microelectronics
Baoguo Zhang, Hebei University of Technology
Weili Liu, Shanghai Xinanna Electronic Technology
Kun Li, Tianjin Hwatsing Technology Europe Knut Gottfried, Fraunhofer ENAS, Germany
Eric Jacquinot, Merck Performance Materials, France
Patrick Ong, IMEC, Belgium
Cedric Perrot, STMicroelectronics, Crolles, France Japan Michio Uneda, Kanazawa Institute of Technology
Kazumi Sugai, Fujimi Inc.
Norikazu Suzuki, Nagoya University
Yasuhisa Sano, Osaka University Taiwan KC Wu, Cabot Microelectronics
Tengchun Tsai, TSMC
Daniel Fang, National Taiwan University of Science and Technology
Jerry Hsu, National Taiwan University of Science and Technology United States S.V. Babu, Clarkson University
Mahadevaiyer Krishnan, IBM
Don Frye, Entegris
Andrew Carswell, Micron